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     ? 2003 IXYS All rights reserved 2 - 2 D2 Fig. 3 Typ. junction capacitance C versus reverse voltage V T R Fig. 2 Typ. value of reverse current I versus reverse voltage V R R Fig. 1 Maximum forward voltage drop characteristics Fig. 4 Average forward current IF(AV) versus case temperature TC Fig. 5 Forward power loss characteristics Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode .0 0.2 0.4 0.6 0.8 1.0V 1 10 100 0 1020304050V 0.0001 0.001 25°C 0.01 75°C 0.1 100°C 1 150°C 10 TVJ=175°C 100 010515A 0 2 4 6 8 10 12 14 0.0001 0.001 0.01 0.1 1 10s t 0.01 0.1 thJC 1 10 0 50 100 150 200°C 0 5 10 15 20 25 IF(AV) TC IF(AV) K/W 10 100 1000 10000μs 100 1000 10000 IFSM tP A 0 1020304050V 100 1000 CT IR IF A VF VR VR pF mA P(AV) W Z A 0.08 DC TVJ = 175°C 150°C 125°C 25°C 50°C 125°C TVJ= 25°C d = 0.5 d = DC 0.5 0.33 0.25 0.17 0.08 DSS 6-0045AS Single Pulse 0.17 0.25 0.33 D = 0.5 328 DSS 6-0045AS |